View APTGF360U60D4G_4621565.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTGF360U60D4G
Single switch NPT IGBT Power Module
1
VCES = 600V IC = 360A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * M6 connectors for power * M4 connectors for signal * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
3 5 2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 600 450 360 720 20 1560 800A@520V Unit V A V W
July, 2008 1-5 APTGF360U60D4G - Rev 1
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTGF360U60D4G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 600V Tj = 25C Tj = 125C Tj = 25C VGE = 15V IC = 400A Tj = 125C VGE = VCE , IC = 6mA VGE = 20V, VCE = 0V Min Typ Max 500 1 2.45 6.5
1200
Unit A mA V V nA
4.5
1.95 2.2 5.5
Dynamic Characteristics
Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=15V, IC=400A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 400A RG = 8 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 400A RG = 8 VGE = 15V Tj = 125C VBus = 300V IC = 400A Tj = 125C RG = 8 VGE 15V ; VBus = 360V tp 10s ; Tj = 125C Min Typ 17 1.6 1 150 72 530 40 160 75 550 50 18.6 17.3 1800 mJ mJ A ns Max Unit nF C
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 400A VR = 300V IF = 400A VGE = 0V Test Conditions VR = 600V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 600 Typ Max 750 1000 400 1.25 1.2 150 250 27 44 5.6 9.2 1.6 Unit V A A V
July, 2008 2-5 APTGF360U60D4G - Rev 1
ns C mJ
di/dt =4400A/s
www.microsemi.com
APTGF360U60D4G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 2500 -40 -40 -40 3 1 Min Typ Max 0.08 0.15 150 125 125 5 2 350 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
D4 Package outline (dimensions in mm)
www.microsemi.com
3-5
APTGF360U60D4G - Rev 1
July, 2008
APTGF360U60D4G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 800 700 600 IC (A)
TJ=125C TJ = 125C VGE=15V VGE=12V
800 700 600
IC (A)
TJ=25C
VGE=20V
500 400 300 200 100 0 0 0.5 1 1.5 2 VCE (V) 2.5
500 400 300 200 100 0
VGE=9V
3
3.5
0
1
2
3 VCE (V)
4
5
800 700 600
Transfert Characteristics 35 30 25 E (mJ) 20 15 10
TJ=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 8 TJ = 125C
Eon
500 IC (A) 400 300 200 100 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 50 40 E (mJ) 30 20 10 0 5 10 15 20 25 Gate Resistance (ohms) 30
VCE = 300V VGE =15V IC = 400A TJ = 125C Eon TJ=125C
Eoff Err
5 0 0 100 200 300 IC (A) 400 500 600
1000 800 IC (A) 600 400 200
Err
Reverse Safe Operating Area
Eoff
VGE=15V TJ=125C RG=8
0 0 100 200 300 VCE (V) 400 500 600
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.09 Thermal Impedance (C/W) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01
0.7 0.5 0.3 0.1 0.05 Single Pulse 0.9
IGBT
0 0.00001
0.0001
0.001 0.01 0.1 rectangular Pulse Duration (Seconds)
1
10
www.microsemi.com
4-5
APTGF360U60D4G - Rev 1
July, 2008
APTGF360U60D4G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 70 60 50 40 30 20 10 0 0 100 200 IC (A) 300 400 500 0 0 0.3 0.6 0.9 VF (V) 1.2 1.5
hard switching ZVS VCE=300V D=50% RG=8 TJ=125C TC=75C ZCS
Forward Characteristic of diode 800
600 IF (A)
400
TJ=125C
200
TJ=25C
0.16 Thermal Impedance (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.5 0.3 0.1 0.05 0.9 0.7
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Diode
Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
0 0.00001
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
APTGF360U60D4G - Rev 1
July, 2008

▲Up To Search▲

Price & Availability of APTGF360U60D4G

	To Download APTGF360U60D4G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .